S8284 is a high-sensitivity si pin photodiode optimized for violet laser detection and especially ideal for optical disc pickup s using a violet laser which has now been put into practical use. S8284 offers 30 % higher sensitivity (at 410 nm) than the conventional type (s1651). S8284 also features high-speed response at a low bias voltage. features l to-18 package l high sensitivity: 0.3 a/w typ. ( =410 nm) l high-speed response: 500 mhz typ. (v r =3 v) l active area: 0.6 1.2 mm/4 elements applications l violet laser detection l optical disc pickup using violet laser photodiode si pin photodiode quadrant pin photodiode for violet laser S8284 absolute maximum ratings (ta=25 c) parameter symbol value unit reverse voltage v r max. 20 v operating temperature topr -20 to +100 c storage temperature tstg -55 to +125 c electrical and optical characteristics (typ. ta=25 c, per 1 element, unless otherwise noted) parameter symbol condition min. typ. max. unit spectral response range - 320 to 1000 - nm peak sensitivity wavelength p - 760 - nm photo sensitivity s =410 nm 0.26 0.30 - a/w dark current i d v r =3 v, all elements - 10 200 pa terminal capacitance ct v r =3 v, f=1 mhz - 2 4 pf cut-off frequency fc v r =3 v, r l =50 ? -3 db 300 500 - mhz 1
si pin photodiode S8284 a b b c a d c common to case d (14) (1.6) 4.0 ?0.2 0.45 lead 4.7 ?0.1 4.7 ?0.1 3.0 ?0.1 5.4 ?0.2 1.2 0.6 0.01 0.01 x y 5.4 ?0.2 2.54 ?0.2 photosensitive surface window 3.0 ?0.1 details of photodiodes wavelength (nm) (typ. ta=25 ?c) photo sensitivity (a/w) 200 0 0.1 0.2 0.7 0.6 0.5 0.4 0.3 400 600 800 1000 spectral response kpinb0195ea dimensional outline (unit: mm) dark current vs. reverse voltage kpina0022eb terminal capacitance vs. reverse voltage (typ. ta=25 ? c) 100 10 1 reverse voltage (v) dark current 0.1 0.01 100 fa 1 pa 10 pa 100 pa kpinb0196ea (typ. ta=25 ? c) 100 10 1 reverse voltage (v) terminal capacitance 0.1 100 ff 10 pf 1 pf 100 pf kpinb0197ea hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.h amamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 1 hamamatsu photonics k.k. cat. no. kpin1055e01 jan. 2001 dn 2
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